Augmented one dimensional nanostructured sensor elements

This paper illustrates the novel approaches to augment the sensing behavior of In₂O₃ base nanowires towards pollutant gases using nanowire field effect transistors (NWFETs). One of the approaches is based on the method of doping. Zn-doping increases the oxygen vacancies which enhance the oxygen ion adsorption on the nanowire surface. The resultant indium zinc oxide (IZO) nanowires show a good selectivity of CO gas over NO and NO₂ gas at room temperature sensing tests. Surface functionalization of the In₂O₃ through self-assembled monolayers can also be used to improve the sensing responses in NWFET. The metal-semiconductor interfaces with nanoscopic depletion regions create nano-Schottky barriers modulation due to the differences in work function and enhance the device conductance.