DocumentCode :
590558
Title :
Impact of selective ablation of self-assembly monolayer by localized Joule heating on silicon nanoelectronic sensors
Author :
Liu, Haoyang Haven ; Lin, T.H. ; Sheu, Jeng-Tzong
Author_Institution :
Dept. of Mater. Sci. & Eng., Grad. Program for Nanotechnol., Hsinchu, Taiwan
fYear :
2012
fDate :
28-31 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Silicon nanodevice biosensors have been attracted a lot of attention due to its advantages of label-free, real-time and very high sensitive detection. This study employs self-assembly monolayer (SAM) of methoxy-poly(ethyleneglycol) silane (MPEG-sil) as passivation on Si nanodevices. Ablation of SAM by Joule heating (JH) was performed at n- region of a nanobelt device, where the linker molecules, biotin were modified subsequently. Detection of Alexa dye-labeled Streptavidin (SA) showed that the fluorescence intensity at n- region increased with each 50-μl SA injection and saturated after the 4th injection. A difference of fluorescence intensity between SAM-ablated device and without passivation is 4.9 fold. Threshold voltage (Vth) shifted ca. 35 mV after the 4th injection for SAM-ablated device and as-fabricated device exhibited only a 10-mV Vth shift. The results indicated that SAM-ablated device possess potential in reduction of sensing time and in increase of sensitivity for low concentration detection.
Keywords :
dyes; elemental semiconductors; fluorescence; monolayers; nanoelectronics; nanosensors; passivation; polymers; self-assembly; silicon; Alexa dye-labeled Streptavidin; JH; Joule heating localization; MPEG-sil; SA; SAM; Si; biotin; fluorescence intensity; linker molecule; low concentration detection; methoxy-poly(ethyleneglycol) silane; nanobelt device; nanodevice biosensor; nanoelectronic sensor; passivation; selective ablation Impact; self-assembly monolayer; threshold voltage; voltage 10 mV; voltage 35 mV; Biosensors; Fluorescence; Heating; Nanobioscience; Nanoscale devices; Silicon; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
ISSN :
1930-0395
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2012.6411470
Filename :
6411470
Link To Document :
بازگشت