Title :
CMOS integrated high speed light sensors for optical wireless communication applications
Author :
Nakhkoob, Behrooz ; Ray, Sambaran ; Hella, Mona M.
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This work presents a single link CMOS high data rate receiver to be integrated in imaging diversity sensor arrays for optical wireless communication targeting indoor scenarios. To compete with existing radio frequency links, sensing and transmitting data in the hundreds of Mbits per second and above, the proposed data/light sensor is optimized at both the photodetector and circuit levels to provide 5Gps data rate from a single optical link using low cost, high yield standard CMOS technology. A novel photo-detector structure, Triple Well Interrupted N-finger photodiode, is proposed that can achieve a bandwidth up to 10 GHz at 1.2V reverse bias. To compensate for the decreased responsivity of the photodiode, a wideband, high gain and low noise transimpedance amplifier compatible with the speed-enhanced CMOS photodiode is implemented in 0.13μm CMOS technology. The amplifier chain achieves a measured bit error rate (BER) of 10-12 at 5 Gbps corresponding to 2.8μA input current in presence of 1pF input capacitance representing the photodiode. The die area is 1106μm×895μm including a transimpedance amplifier (TIA), limiter and buffer and the power dissipation is 68mW from a 1.5V DC supply.
Keywords :
CMOS image sensors; error statistics; indoor radio; operational amplifiers; optical communication; optical receivers; optical sensors; photodetectors; photodiodes; radio receivers; sensor arrays; wireless sensor networks; BER; CMOS integrated high speed light sensor; TIA; bit error rate; buffer; capacitance 1 pF; current 2.8 muA; data transmission; data-light sensor; high gain transimpedance amplifier; imaging diversity sensor array; limiter; low noise transimpedance amplifier; optical wireless communication application; photodetector; power 68 mW; power dissipation; radiofrequency link; single link CMOS high data rate receiver; single optical link; size 0.13 mum; speed-enhanced CMOS photodiode; triple well interrupted N-finger photodiode; voltage 1.2 V; voltage 1.5 V; wideband transimpedance amplifier; CMOS integrated circuits; Imaging; Optical fiber communication; Optical receivers; Photodiodes; Wireless communication;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411496