Title :
A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology
Author :
Yi-Da Lin ; Jian-Yuan Lin ; Chun-Kai Wang ; Long-Sheng Fan ; Kuei-Ann Wen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).
Keywords :
1/f noise; CMOS integrated circuits; accelerometers; application specific integrated circuits; capacitive sensors; choppers (circuits); circuit tuning; integrated circuit noise; microfabrication; microsensors; monolithic integrated circuits; radiofrequency amplifiers; radiofrequency integrated circuits; 1/f noise; ASIC-compatible CMOS MEMS technology; DC offset; VGA; correlated double sampling; dual-chopper amplifier; frequency 500 Hz; fully-differential variable gain amplifier; low noise gain tunable interface; monolithic CMOS MEMS accelerometer; monolithic capacitance accelerometer; size 0.18 mum; total noise equivalent acceleration; universal sensing system; Accelerometers; CMOS integrated circuits; Capacitance; Micromechanical devices; Noise; Sensitivity; Sensors;
Conference_Titel :
Sensors, 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4577-1766-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2012.6411546
