A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology

Author

Yi-Da Lin ; Jian-Yuan Lin ; Chun-Kai Wang ; Long-Sheng Fan ; Kuei-Ann Wen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

28-31 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).

Keywords

1/f noise; CMOS integrated circuits; accelerometers; application specific integrated circuits; capacitive sensors; choppers (circuits); circuit tuning; integrated circuit noise; microfabrication; microsensors; monolithic integrated circuits; radiofrequency amplifiers; radiofrequency integrated circuits; 1/f noise; ASIC-compatible CMOS MEMS technology; DC offset; VGA; correlated double sampling; dual-chopper amplifier; frequency 500 Hz; fully-differential variable gain amplifier; low noise gain tunable interface; monolithic CMOS MEMS accelerometer; monolithic capacitance accelerometer; size 0.18 mum; total noise equivalent acceleration; universal sensing system; Accelerometers; CMOS integrated circuits; Capacitance; Micromechanical devices; Noise; Sensitivity; Sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2012 IEEE

Conference_Location

Taipei

ISSN

1930-0395

Print_ISBN

978-1-4577-1766-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2012.6411546

Filename

6411546