Title :
Cryogenic GaAs high gain and low-noise amplifier module for radio astronomy
Author :
Fukuda, Goh ; Yoshida, Sigeru ; Kobayashi, Yoshiyuki ; Noji, T. ; Tashiro, S. ; Kawasaki, S.
Author_Institution :
Electr. Eng. Dept., Tokyo Univ. of Sci., Tokyo, Japan
Abstract :
A small size low noise amplifier (LNA) module operating at 10GHz capable of a cryogenic cooling for radio astronomy is presented. The LNA has been fabricated using a 0.15μm gate length GaAs-based pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) technology. This MMIC amplifier is a single chip consisting of three-stages was assembled in a module with a size of 38mm × 20mm. Using cryogenic equipments, the module was cooled down to a cryogenic temperature of 113 K, where the LNA achieved a high gain of 32.6dB with a noise temperature of 71K (noise figure of 0.96 dB) at 10 GHz. The result obtained prove that the LNA presented is a suitable candidate for radio astronomy.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; cooling; cryogenic electronics; gallium arsenide; low noise amplifiers; radioastronomy; GaAs; LNA module; MMIC amplifier; MMIC technology; cryogenic cooling; cryogenic equipments; cryogenic high gain amplifier module; frequency 10 GHz; low-noise amplifier module; monolithic microwave integrated circuit technology; noise figure 0.96 dB; pHEMT; pseudomorphic high electron mobility transistor; radio astronomy; size 0.15 mum; temperature 113 K; temperature 71 K; Cryogenics; Gain; MMICs; Noise; Radio astronomy; Temperature; GaAs Amplifier; MMIC; cryogenic electronics; low noise amplifier; pseudomorphic high electron mobility transistor (pHEMT); radio astronomy;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
DOI :
10.1109/APMC.2012.6421774
