Title :
Analytical study of the effect of asymmetric gate bias on the performance of double gate TFET
Author :
Gupta, Puneet ; Das, Joydeep ; Burman, D. ; Brahma, Madhuchhanda ; Rahaman, Hafizur ; Dasgupta, Parthasarathi
Author_Institution :
Bengal Eng. & Sci. Univ., Shibpur, India
Abstract :
In this paper we have investigated the effect of asymmetric gate bias on the performance of a double gated TFET structure. We have carried out an extensive simulation study on a recently reported novel electron hole bilayer TFET structure. The structure exhibits a high on current in the range of 50 μA/μm and the off current remains as low as 10-15 Ampere/μm. So a Ion/Ioff ratio of 10P10 can be achieved. Subthreshold swing has also been reduced to a value of 18mV/decade. The device principle and performance are investigated by 2D numerical simulation.
Keywords :
field effect transistors; numerical analysis; tunnel transistors; 2D numerical simulation; asymmetric gate bias; double gate TFET; electron hole bilayer; subthreshold swing; tunnel FET; Decision support systems; Dielectrics; Educational institutions; Electron devices; Intelligent systems; Presses; Silicon on insulator technology; EHBTFET; TFET; subthreshold swing; transfer characteristics;
Conference_Titel :
Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4699-3
DOI :
10.1109/CODIS.2012.6422157
