DocumentCode
591405
Title
Alx Ga1−x As based parabolic quantum well structures: Enhancement of multisubband electron mobility
Author
Sahu, Trinath ; Panda, Anup Kumar ; Palo, Scott
Author_Institution
Dept. of Electron. & Commun. Eng., Nat. Inst. of Sci. & Technol., Berhampur, India
fYear
2012
fDate
28-29 Dec. 2012
Firstpage
161
Lastpage
164
Abstract
We analyse the effect of parabolic potential profile on the multrisubband electron mobility in a GaAs-AlGaAs parabolic double quantum well structure. We show that in case of a double quantum well structure, the mobility is enhanced at large well widths at which two subbands are occupied. On the other hand for a single parabolic quantum well, the occupation of the second subband occurs at a large well width compared to that of the single square well. The mobility enhances nonlinearly with increase in well width till the second subband is occupied.
Keywords
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; semiconductor quantum wells; AlxGa1-xAs; multisubband electron mobility enhancement; parabolic double quantum well structure; parabolic potential profile effect analysis; single parabolic quantum well; Decision support systems; Intelligent systems; Double quantum well structures; Multisubband electron mobility; Parabolic quantum wells;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on
Conference_Location
Kolkata
Print_ISBN
978-1-4673-4699-3
Type
conf
DOI
10.1109/CODIS.2012.6422161
Filename
6422161
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