• DocumentCode
    591405
  • Title

    AlxGa1−xAs based parabolic quantum well structures: Enhancement of multisubband electron mobility

  • Author

    Sahu, Trinath ; Panda, Anup Kumar ; Palo, Scott

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Nat. Inst. of Sci. & Technol., Berhampur, India
  • fYear
    2012
  • fDate
    28-29 Dec. 2012
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    We analyse the effect of parabolic potential profile on the multrisubband electron mobility in a GaAs-AlGaAs parabolic double quantum well structure. We show that in case of a double quantum well structure, the mobility is enhanced at large well widths at which two subbands are occupied. On the other hand for a single parabolic quantum well, the occupation of the second subband occurs at a large well width compared to that of the single square well. The mobility enhances nonlinearly with increase in well width till the second subband is occupied.
  • Keywords
    III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; semiconductor quantum wells; AlxGa1-xAs; multisubband electron mobility enhancement; parabolic double quantum well structure; parabolic potential profile effect analysis; single parabolic quantum well; Decision support systems; Intelligent systems; Double quantum well structures; Multisubband electron mobility; Parabolic quantum wells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-4699-3
  • Type

    conf

  • DOI
    10.1109/CODIS.2012.6422161
  • Filename
    6422161