DocumentCode :
591406
Title :
Small - signal parameter extraction to study the RF performance of SOI and SON MOSFET
Author :
Malakar, T.D. ; Manna, Bibhas ; Sarkhel, Saheli ; Naskar, Sourav ; Dutta, Pranab K. ; Sarkar, Subir Kumar
Author_Institution :
Dept. of Electron. & Commun. Eng., RCCIIT, Kolkata, India
fYear :
2012
fDate :
28-29 Dec. 2012
Firstpage :
192
Lastpage :
194
Abstract :
A simple small-signal equivalent circuit for generalized horizontal SOI and SON MOSFET has been presented. The intrinsic parameters of the small-signal model are obtained from a compact capacitance based analytical model Using those small-signal model parameters, frequency dependent performances of those structures are simulated with SILVACO SMART SPICE RF Module. It has been realized that SON technology improves the frequency response due to improved conductance and reduced parasitic effects. This type of combined analytical and simulation approach allows us to predict the technology road map for future ultra dense, low power nanoelectronics devices and their efficiency in RF frequency range.
Keywords :
MOSFET; equivalent circuits; frequency response; silicon-on-insulator; RF frequency range; RF performance; SILVACO SMART SPICE RF Module; SOI MOSFET; SON MOSFET; SON technology; compact capacitance based analytical model; frequency dependent performances; frequency response; intrinsic parameters; nanoelectronics devices; parasitic effects; small-signal equivalent circuit; small-signal model parameters; small-signal parameter extraction; Decision support systems; Intelligent systems; Analytical Model; RF Simulation; Silicon-On-Nothing; Silicon-On-insulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4699-3
Type :
conf
DOI :
10.1109/CODIS.2012.6422169
Filename :
6422169
Link To Document :
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