Title :
A 2D analytical modeling approach for nanoscale strained-Si (s-Si) on silicon-germanium-on-insulator (SGOI) MOSFETs by evanescent mode analysis
Author :
Kumar, Manoj ; Dubey, Souvik ; Jit, S. ; Tiwari, P.K.
Author_Institution :
Dept. of Electron. Eng., Indian Inst. of Technol. (BHU), Varanasi, India
Abstract :
This paper presents a compact two-dimensional (2D) analytical model of short-channel strained-Si on SGOI MOSFETs. The channel potential is obtained by solving 2D Poisson´s equation using evanescent mode analysis. The analytical model takes into account the effects of all the device parameters along with Ge mole fraction in the relaxed SiGe layer on the subthreshold device characteristics. In addition, the threshold voltage and subthreshold slope, the key subthreshold physical parameters, are formulated by employing surface potential. For the validation of model, the model results have been compared with numerical simulation results from ATLAS™ by Silvaco.
Keywords :
Ge-Si alloys; MOSFET; Poisson equation; silicon-on-insulator; 2D Poisson equation; 2D analytical modeling approach; ATLAS; SiGe; Silvaco; evanescent mode analysis; key subthreshold physical parameters; mole fraction; nanoscale strained on SGOI MOSFET; numerical simulation; relaxed layer; silicon-germanium-on-insulator; subthreshold device characteristics; subthreshold slope; surface potential; threshold voltage; two-dimensional analytical model; Decision support systems; Erbium; Intelligent systems; Silicon-Germanium-on-Insulator (SGOI); Strained-Si (s-Si); evanescent mode analysis;
Conference_Titel :
Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4699-3
DOI :
10.1109/CODIS.2012.6422235
