DocumentCode :
59282
Title :
Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform
Author :
Novack, Ari ; Shi, Ruoyun ; Streshinsky, Matthew ; Jingcheng Tao ; Kang Tan ; Lim, Andy Eu-Jin ; Guo-Qiang Lo ; Baehr-Jones, Tom ; Hochberg, Michael
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Volume :
32
Issue :
22
fYear :
2014
fDate :
Nov.15, 15 2014
Firstpage :
4345
Lastpage :
4348
Abstract :
We present the design and fabrication of complimentary metal-semiconductor field-effect transistors (MESFETs) monolithically integrated on a high-speed silicon photonics platform. The transistors were built in an existing silicon photonics process without any additional process steps or modifications to maintain consistent photonics performance. The MESFETs showed a threshold voltage of -1.4 and 2.0 V for NMES and PMES, respectively. The NMES transconductance was measured to be 46.4 μS/μm, and the cutoff frequency was shown to be 2.2 GHz. Transistors of this design can be simply integrated into silicon photonics platforms for on-chip feedback circuits.
Keywords :
Schottky gate field effect transistors; elemental semiconductors; integrated optoelectronics; silicon; NMES; PMES; Si; complimentary metal-semiconductor field-effect transistors; cutoff frequency; frequency 2.2 GHz; high-speed silicon photonics platform; monolithically integrated MESFET devices; on-chip feedback circuits; threshold voltage; transconductance; voltage -1.4 V to 2.0 V; Logic gates; MESFETs; Modulation; Silicon photonics; Metal-semiconductor field-effect transistor; silicon photonics;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2014.2355818
Filename :
6894133
Link To Document :
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