• DocumentCode
    59285
  • Title

    Synthesis and Analysis of Design-Dependent Ring Oscillator (DDRO) Performance Monitors

  • Author

    Tuck-Boon Chan ; Gupta, Puneet ; Kahng, Andrew ; Liangzhen Lai

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
  • Volume
    22
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2117
  • Lastpage
    2130
  • Abstract
    With CMOS technology scaling, circuit performance has become more sensitive to manufacturing and environmental variations. Hence, there is a need to measure or monitor circuit performance during manufacturing and at runtime. Since each circuit may have different sensitivities to process variations, previous works have focused on the synthesis of circuit performance monitors that are specific to a given design. We develop a systematic approach for the synthesis of multiple design-dependent monitors, as well as the corresponding calibration and delay estimation methods. Our approach synthesizes design-dependent ring oscillators (DDROs) using standard-cell library gates and conventional physical implementation flows. Our delay estimation method limits the memory usage overhead by clustering critical paths with similar delay sensitivities. Experimental results show that our delay estimation method using multiple DDROs reduces overestimation (timing margin) by up to 25% compared to using a single monitor. Furthermore, our silicon measurement results for monitoring an industrial microprocessor implemented in a 45-nm silicon-on-insulator process show that DDRO can reduce the mean delay estimation error by 35% compared to inverter-based ring oscillators.
  • Keywords
    CMOS integrated circuits; calibration; delays; integrated circuit measurement; microprocessor chips; oscillators; silicon-on-insulator; CMOS technology scaling; DDRO; circuit performance monitoring; delay estimation; delay sensitivity; design-dependent ring oscillator; industrial microprocessor; memory usage overhead; process variations; silicon-on-insulator process; size 45 nm; standard-cell library gates; Circuit optimization; Delay estimation; Logic gates; Monitoring; Sensitivity; Adaptive voltage scaling; circuit performance monitoring; clustering; ring oscillators; ring oscillators.;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2013.2282742
  • Filename
    6637083