Title :
Benefit of mixed technologies for automotive radar components
Author :
Domnesque, D. ; Auxemery, P. ; Viaud, J.P.
Author_Institution :
United Monolithic Semicond., Villebon-sur-Yvette, France
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
Next generation of car radar components will require lower cost, high electrical performances, high reliability and flexibility in order to fit with various car radar architecture. Benefit of chip partionning based on both SiGe and GaAs technologies is presented for 24GHz and 77GHz applications.
Keywords :
Ge-Si alloys; III-V semiconductors; MIMIC; MMIC; gallium arsenide; reliability; road vehicle radar; GaAs; MMIC; SiGe; automotive radar components; car radar architecture; car radar components; chip partionning; frequency 24 GHz; frequency 77 GHz; reliability; Automotive engineering; Gallium arsenide; MMICs; Next generation networking; Radar; Reliability; Silicon germanium; AsGa; Car Radar; MMIC; Rx; SiGe; Tx;
Conference_Titel :
Radar Conference (EuRAD), 2012 9th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2471-7
