DocumentCode
593649
Title
Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications
Author
Le Gallou, Nicolas ; Vidkjaer, J. ; Poivey, C.
Author_Institution
ESTEC, Eur. Space Agency, Noordwijk, Netherlands
fYear
2012
fDate
Oct. 31 2012-Nov. 2 2012
Firstpage
365
Lastpage
368
Abstract
This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%-82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.
Keywords
III-V semiconductors; UHF power amplifiers; gallium compounds; power HEMT; power MOSFET; space vehicle electronics; spaceborne radar; wide band gap semiconductors; GaN; HEMT; HPA; LDMOS FET technology; biomass project; efficiency 70 percent to 82 percent; frequency 435 MHz; high power amplifier; power 120 W to 200 W; radiation tests; spaceborne P-band radar; Gallium nitride; Ions; Logic gates; Power amplifiers; Power generation; Radio frequency; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radar Conference (EuRAD), 2012 9th European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2471-7
Type
conf
Filename
6450771
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