• DocumentCode
    593649
  • Title

    Suitability of GaN and LDMOS for 70–82% efficiency 120–200W HPA addressing spaceborne P-band radar applications

  • Author

    Le Gallou, Nicolas ; Vidkjaer, J. ; Poivey, C.

  • Author_Institution
    ESTEC, Eur. Space Agency, Noordwijk, Netherlands
  • fYear
    2012
  • fDate
    Oct. 31 2012-Nov. 2 2012
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    This paper addresses the development of P-band (435 MHz) HPA based on different technologies (GaN HEMT, LDMOS FET) for future use in pace radar applications in the context of the Biomass project. In particular best in class PAE of 70%-82% is targeted and achieved for power levels of 120W. In order to address suitability for space applications, the results of radiation tests are presented. The results constraint the design mainly for LDMOS technology and allow to draw conclusions on the most appropriate technology for use in future spaceborne application at P-band.
  • Keywords
    III-V semiconductors; UHF power amplifiers; gallium compounds; power HEMT; power MOSFET; space vehicle electronics; spaceborne radar; wide band gap semiconductors; GaN; HEMT; HPA; LDMOS FET technology; biomass project; efficiency 70 percent to 82 percent; frequency 435 MHz; high power amplifier; power 120 W to 200 W; radiation tests; spaceborne P-band radar; Gallium nitride; Ions; Logic gates; Power amplifiers; Power generation; Radio frequency; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radar Conference (EuRAD), 2012 9th European
  • Conference_Location
    Amsterdam
  • Print_ISBN
    978-1-4673-2471-7
  • Type

    conf

  • Filename
    6450771