A mixed-domain behavioral model´s extraction for digital I/O buffers

Author

Dghais, Wael ; Cunha, Telmo R. ; Pedro, Jose C.

Author_Institution

Inst. de Telecomun., Univ. de Aveiro, Aveiro, Portugal

fYear

2012

fDate

21-24 Oct. 2012

Firstpage

224

Lastpage

227

Abstract

The paper presents a novel extraction procedure based on the frequency domain formulation of the current-charge (I-Q) behavioral model for digital I/O buffers/drivers output admittance followed by a time domain extraction of the predriver´s nonlinear dynamic functions. The large signal model´s functions of the drivers´ output admittance are derived from the bias-dependent scattering, or S-parameters, measurements. This easy and fast extraction method allows the accurate generation of the data-based model from automated and straightforward measurements. The extracted model´s functions are implemented as lookup tables (LUTs) and the behavioral model is validated in typical SI scenario.

Keywords

S-parameters; buffer circuits; driver circuits; table lookup; I-Q behavioral model; LUT; S-parameter measurement; bias-dependent scattering; current-charge behavioral model; data-based model; digital I-O buffer-driver output admittance; frequency domain formulation; large signal model function; lookup table; mixed-domain behavioral model extraction; predriver nonlinear dynamic function; time domain extraction; Admittance; Computational modeling; Data models; Frequency domain analysis; Integrated circuit modeling; Predictive models; behavioral models extraction; digital I/O buffer; large signal model; signal integrity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging and Systems (EPEPS), 2012 IEEE 21st Conference on

Conference_Location

Tempe, AZ

Print_ISBN

978-1-4673-2539-4

Electronic_ISBN

978-1-4673-2537-0

Type

conf

DOI

10.1109/EPEPS.2012.6457882

Filename

6457882