DocumentCode :
594146
Title :
Ge-content dependent efficiency of Si/SiGe heterojunction solar cell
Author :
Das, Manab Kr ; Choudhary, Santosh K.
Author_Institution :
Dept. of Electron. Eng., Indian Sch. of Mines, Dhanbad, India
fYear :
2012
fDate :
13-16 Dec. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Efficiency of n-Si1-xGex/p-Si heterojunction solar cell with different Ge-content is studied in this paper. Carrier confinement at the heterointerface between Si and SiGe is considered in this study. A nonlinear variation of overall efficiency of Si/SiGe solar cell with Ge-content (x) is obtained. Efficiency initially increases with increase in x and after a maximum value it decreases. Efficiency without considering the effect of carrier confinement is also studied.
Keywords :
Ge-Si alloys; elemental semiconductors; p-n heterojunctions; silicon; solar cells; Ge-content dependent efficiency; Si-SiGe heterojunction solar cell; Si1-xGex-Si; carrier confinement effect; heterointerface; heterojunction solar cell efficiency; nonlinear variation; overall efficiency; Absorption; Carrier confinement; Heterojunctions; Mathematical model; Photovoltaic cells; Silicon; Silicon germanium; Si/SiGe; carrier confinement; heterojunction; solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
Type :
conf
DOI :
10.1109/PGC.2012.6458050
Filename :
6458050
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=594146
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