Modeling of a Type-II antimonide based superlattice for novel optical switching Applications

In recent times, the Type-II InAs/GaSb Superlatttice has been opted as a viable replacement for HgCdTe based photodetectors as the band structure of these devices can be tailored. Significant progress has been made and ongoing research is being conducted in the growth and characterization of these devices. We present the model of such a device with experimentally verified dimensions and parameters. The Transfer Matrix Method (TMM) has been adopted to represent the wave function solution under zero bias and non-zero bias respectively. Cutoff wavelength of 10μm range was achieved. These devices have the added advantage of tunability with respect to well width and bias voltages and have attractive applications in optical switching.