Title :
Experimental and theoretical study of excitonic electroabsorption in high-purity GaAs at room temperature
Author :
Sapkota, D.P. ; Kayastha, M.S. ; Takahashi, Masaharu ; Wakita, Ken
Author_Institution :
Grad. Sch. of Eng., Chubu Univ., Kasugai, Japan
Abstract :
The absorption spectrum in high-purity GaAs has been theoretically studied in the presence of electric field taking into account of excitonic transition and continuum band transition at room temperature. We have calculated the Stark shift, height of exciton peak, linewidth broadening of exciton, extinction ratio as a function of electric field. We also have compared these results with the experimental results and found the close agreement with experimental.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; spectral line broadening; GaAs; Stark shift; continuum band transition; exciton peak; excitonic electroabsorption; excitonic transition; extinction ratio; linewidth broadening; temperature 293 K to 298 K; Photonics; Electroabsorption; excitonic; room temperature;
Conference_Titel :
Photonics Global Conference (PGC), 2012
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2513-4
DOI :
10.1109/PGC.2012.6458083
