Title :
A 500μA low drop-out voltage regulator in 90-nm CMOS technology
Author :
Hicham, A. ; Qjidaa, Hassan
Author_Institution :
Lab. d´Electron., Univ. Sidi Mohamed Ben Abdellah, Fès, Morocco
Abstract :
The paper presents a CMOS low-dropout voltage regulator (LDO). By using wideband and low-current circuit techniques, high performances in terms of transient response, Implemented in 90-nm CMOS technology. The proposed LDO voltage regulator with 50-mA driving capability is presented utilizes paralleled input differential pairs and current amplifiers to provide fast transient response, the LDO itself should provide 0.1μs with transient variation of the voltage less than 153mV.
Keywords :
CMOS integrated circuits; amplifiers; nanoelectronics; voltage regulators; CMOS low-dropout voltage regulator; CMOS technology; current 500 muA; current amplifier; low drop-out voltage regulator; low-current circuit technique; paralleled input differential pair; size 90 mm; time 0.1 mus; transient variation; wideband circuit technique; CMOS integrated circuits; Capacitors; Noise; Regulators; Transient response; Transistors; Voltage control; Frequency compensation (cap CMOS); Layout of schematic; Power supply rejection; Squared Output Noise; Transient response; low-dropout (LDO);
Conference_Titel :
Complex Systems (ICCS), 2012 International Conference on
Conference_Location :
Agadir
Print_ISBN :
978-1-4673-4764-8
DOI :
10.1109/ICoCS.2012.6458540
