Tunable RF GaN-power transistor implementing impedance matching networks based on BST thick films

Author

Maune, Holger ; Bengtsson, Olof ; Golden, F. ; Sazegar, M. ; Jakoby, Rolf ; Heinrich, Wolfgang

Author_Institution

Inst. for Microwave Eng. & Photonics, Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1206

Lastpage

1209

Abstract

In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.

Keywords

III-V semiconductors; UHF power amplifiers; UHF transistors; barium compounds; gallium compounds; impedance matching; power transistors; wide band gap semiconductors; BST thick films; BaSrTi₃; GaN; barium-strontium-titanate thick film technology; frequency 2 GHz; gain 11 dB; impedance matching networks; integrated bias decoupling; single unit transistor cell; tunable RF power transistor; tunable matching network; tunable power amplifier; Gain; Power generation; Radio frequency; Transistors; Tuning; Varactors; Voltage measurement; Adaptive Matching; Ferroelectrics; Power Amplifier; RF Adaptivity; Tunable Components;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459076