Millimeter-wave CMOS transceiver linearization for ultra high-speed wireless backhaul links

Author

Tian-Wei Huang ; Wei-Tsung Li ; Hong-Yuan Yang ; Yen-Hung Kuo ; Jen-Hao Cheng ; Jeng-Han Tsai

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1355

Lastpage

1358

Abstract

For future millimeter-wave backhaul links, the increasing demand of high-speed communication systems over 10-Gbps is imposing an increasing modulation complexity from 64-QAM to 256-QAM, or even up to 1024-QAM, which results in a stringent linearity requirement of the millimeter-wave CMOS transceiver design. This paper will cover recently reported linearization techniques for millimeter-wave CMOS low-noise amplifiers, frequency converters, and power amplifiers. These techniques are essential for future efficiency enhancement and self-calibrated high-yield mass production of millimeter-wave products.

Keywords

CMOS integrated circuits; field effect MIMIC; linearisation techniques; low noise amplifiers; millimetre wave frequency convertors; millimetre wave power amplifiers; quadrature amplitude modulation; radio links; radio transceivers; 1024-QAM; 256-QAM; 64-QAM; frequency converters; high-speed communication systems; linearization techniques; millimeter-wave CMOS low-noise amplifiers; millimeter-wave CMOS transceiver linearization design; millimeter-wave products; modulation complexity; power amplifiers; self-calibrated high-yield mass production; ultra high-speed wireless backhaul links; CMOS integrated circuits; Gain; Linearity; Linearization techniques; MOSFET circuits; Millimeter wave communication; CMOS transceivers; linearization; millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2012 42nd European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2215-7

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6459093