Title :
Millimeter-wave RF-MEMS SPDT switch networks in a SiGe BiCMOS process technology
Author :
Reyaz, S. ; Samuelsson, C. ; Malmqvist, R. ; Kaynak, Mehmet ; Rydberg, A.
Author_Institution :
Angstromlaboratoriet, Uppsala Univ., Uppsala, Sweden
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper presents mm-wave capacitive RF-MEMS based Single-Pole-Double-Throw (SPDT) switches fabricated in a SiGe BiCMOS process technology. Three different SiGe RF-MEMS based SPDTs (targeting the 40-80 GHz range) present 3-4 dB of in-band losses and up to 20-25 dB of isolation, respectively. The measured in-band attenuation of the characterized SiGe MEMS SPDTs corresponds to a loss of 2-3 dB when close to 1 dB of combined losses within the RF pads has been removed. The experimental s-parameter data was obtained from RF-tests of more than 300 characterized SPDT switch networks indicating a high fabrication yield and process repeatability of the fabricated SiGe MEMS circuits. The validated SiGe MEMS switch circuits can enable single-chip reconfigurable ICs for wireless communication and sensing applications up to 100 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; S-parameters; field effect MIMIC; microswitches; semiconductor materials; BiCMOS process technology; MEMS switch circuits; RF pads; S-parameter data; SPDT switches; SiGe; frequency 40 GHz to 80 GHz; loss 2 dB to 3 dB; loss 3 dB to 4 dB; measured in-band attenuation; millimeter-wave RF-MEMS SPDT switch networks; mm-wave capacitive RF-MEMS based single-pole-double-throw switches; process repeatability; single-chip reconfigurable IC; wireless communication; Loss measurement; Micromechanical devices; Microswitches; Radio frequency; Silicon germanium; Switching circuits; Millimeter-wave; radio frequency microelectromechanical systems; silicon germanium; switches;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
