Title : 
Temperature compensated bulk acoustic wave resonator (BAWR) for near zero temperature coefficient of frequency (TCF)
         
        
            Author : 
Sang Uk Son ; Insang Song ; Jeashik Shin ; Ho-Soo Park ; Jing Cui ; Chul-Soo Kim ; Duck-Hwan Kim
         
        
            Author_Institution : 
Future IT Res. Center, Samsung Adv. Inst. of Technol. (SAIT), Yongin, South Korea
         
        
        
            fDate : 
Oct. 29 2012-Nov. 1 2012
         
        
        
        
            Abstract : 
A bulk acoustic wave resonator (BAWR) is an essential component of RF filters and duplexers in wireless communication devices. The BAWR consists of a piezoelectric layer sandwiched between bottom and top electrodes. Its resonance frequency shifts as an environment temperature changes, normally ranging -25~-30 ppm/ °C, of which phenomenon is referred to temperature coefficient of frequency (TCF). When a resonator has a large TCF value the gap between adjacent bands is reduced and interference occurs. To overcome this problem, a low TCF value is required while maintaining the characteristics such as carrier bandwidth, high quality factor (Q), and high effective coupling coefficient (kt2). In this work, a new BAWR structure with SiO2/SiN layers both on the top electrode and under the bottom electrode enabled TCF of -0.3~-7.8 ppm/°C, Q of 2400, and kt2 of 5.4%, respectively. This BAWR has been applied to transmission filters for LTE Band-7 and Band-25.
         
        
            Keywords : 
acoustic resonators; acoustic wave interference; bulk acoustic wave devices; compensation; electrodes; silicon compounds; BAWR structure; LTE band-25; LTE band-7; RF filters; SiO2-SiN; TCF; coupling coefficient; duplexers; electrodes; interference; near zero temperature coefficient of frequency; piezoelectric layer; quality factor; resonance frequency shifts; temperature compensated bulk acoustic wave resonator; transmission filters; wireless communication devices; Electrodes; Resonant frequency; Resonator filters; Silicon; Silicon compounds; Temperature; Temperature measurement; Acoustic waves; interference; narrow band; resonator filters; temperature;
         
        
        
        
            Conference_Titel : 
Microwave Conference (EuMC), 2012 42nd European
         
        
            Conference_Location : 
Amsterdam
         
        
            Print_ISBN : 
978-1-4673-2215-7
         
        
            Electronic_ISBN : 
978-2-87487-026-2