Title :
Development of RF-MEMS ohmic contact switch for mobile handsets applications
Author :
Fujiwara, Toshihito ; Seki, Takaya ; Sato, Fumiaki ; Oba, Makoto
Author_Institution :
PMEMS Project, OMRON Corp., Yasu, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
Here, we propose a practical single pole double throw (SPDT)-structured RF-MEMS switch for mobile handsets applications. This RF-MEMS switch has a very low insertion loss of 0.18dB and a high isolation of 32dB, up to 3GHz. And this RF-MEMS switch achieves small size by using through silicon via (TSV) structure (2.5×1.6×0.4mm3). Moreover, in the last of this paper, we show the feasibility of 3 voltage drive by integrating a charge pump IC, since a low-voltage drive is indispensable for mobile handsets applications.
Keywords :
microswitches; microwave integrated circuits; mobile handsets; three-dimensional integrated circuits; SPDT-structured RF-MEMS ohmic contact switch; TSV structure; charge pump IC; loss 0.18 dB; low-voltage drive; mobile handsets applications; single pole double throw-structured RF-MEMS ohmic contact switch; through silicon via structure; Actuators; Charge pumps; Contacts; Integrated circuits; Radio frequency; Substrates; Switches; Charge pumps; Electrostatic Actuator; Linearity;
Conference_Titel :
Microwave Conference (EuMC), 2012 42nd European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2215-7
Electronic_ISBN :
978-2-87487-026-2
