DocumentCode :
59473
Title :
Generation of High Speed Polarization Modulated Data Using a Monolithically Integrated Device
Author :
Naeem, Muhammad A. ; Haji, Mohsin ; Holmes, Barry M. ; Hutchings, David C. ; Marsh, John H. ; Kelly, Anthony E.
Author_Institution :
Dept. of Electr. Eng., Univ. of the Punjab, Lahore, Pakistan
Volume :
21
Issue :
4
fYear :
2015
fDate :
July-Aug. 2015
Firstpage :
207
Lastpage :
211
Abstract :
We report on the generation of high speed polarization modulated data via direct electrical binary data injection to the phase shifter section of a monolithically integrated laser diode integrated with a polarization controller. The device is fabricated on standard InP/AlGaInAs multiple quantum-well material and consists of a semiconductor laser, a passive polarization mode convertor, and an active differential phase-shifter section. We demonstrate the generation of 300 Mb/s polarization shift keyed data.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; light polarisation; optical phase shifters; semiconductor lasers; semiconductor quantum wells; InP-AlGaInAs; active differential phase-shifter section; direct electrical binary data injection; high speed polarization modulated data generation; monolithically integrated device; monolithically integrated laser diode; passive polarization mode convertor; phase shifter section; polarization controller; semiconductor laser; standard InP/AlGaInAs multiple quantum-well material; Educational institutions; Modulation; Optical polarization; Optical waveguides; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers; Integrated circuit fabrication; Modulation, Phase shifters; Polarization; modulation; phase shifters; polarization;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2014.2375492
Filename :
6967752
Link To Document :
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