Title :
Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO2 AlN/Sapphire Template
Author :
Yu-An Chen ; Cheng-Huang Kuo ; Li-Chuan Chang ; Ji-Pu Wu
Author_Institution :
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
Abstract :
In this paper, we investigated GaN-based light-emitting diodes (LEDs) with embedded air voids grown by pulsed growth epitaxial (PGE) method. The void shape can be successfully controlled using the patterned SiO2 AlN/sapphire template and pulsed growth method. By embedding the air voids, we could enhance the 20-mA output power by >61.9%, compared with conventional LED. The improvements could be attributed to the enhanced light extraction efficiency utilizing air voids and improved internal quantum efficiency through PGE method.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor epitaxial layers; voids (solid); wide band gap semiconductors; GaN; GaN-based light-emitting diodes; LED; SiO-AlN-Al2O3; air voids; internal quantum efficiency; light extraction efficiency; output power; pulsed growth epitaxial method; void shape; Crystals; Epitaxial growth; Epitaxial layers; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Substrates; AlN; LED; Pulsed growth; voids;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2014.2353932
