Title :
Enhanced Operation Characteristics in Poly-Si Nanowire Charge-Trapping Flash Memory Device With SiGe Buried Channel
Author :
Chun-Yuan Chen ; Kuei-Shu Chang-Liao ; Li-Jung Liu ; Wei-Chieh Chen ; Tien-Ko Wang
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Operation characteristics in a polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory device are studied with SiGe buried channel for the first time. Compared with the flash device with a general poly-Si NW channel, the device with SiGe buried channel shows improved programming and erasing speeds since the enhanced electric field in tunneling layer is enhanced by SiGe buried layer. The endurance characteristics are also improved by the SiGe buried channel while retention performances are retained. The SiGe buried channel is promising to CT flash device for 3D nonvolatile memory applications.
Keywords :
Ge-Si alloys; elemental semiconductors; flash memories; nanowires; random-access storage; silicon; tunnelling; 3D nonvolatile memory application; CT; NW; Si-SiGe; buried channel; enhanced operation characteristics; polySi nanowire charge-trapping flash memory device; polycrystalline silicon; retention performances; tunneling layer; Ash; Logic gates; Performance evaluation; Programming; Silicon germanium; Tunneling; 3D NVM; SiGe buried channel; charge-trapping (CT) flash memory; poly-Si; siGe buried channel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2348714
