Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes

Author

Chen, Mei ; Zhang, B.P. ; Cai, L.E. ; Zhang, J.Y. ; Ying, L.Y. ; Lv, X.Q.

Author_Institution

Dept. of Electron. Eng., Xiamen Univ., Xiamen, China

Volume

5

Issue

4

fYear

2013

fDate

Aug. 2013

Firstpage

8400407

Lastpage

8400407

Abstract

An auto-split laser lift-off (LLO) method for fabrication of vertical-injection GaN-based green light-emitting diodes (ASV-LEDs) is demonstrated. The ASV-LEDs exhibited a significant improvement in the light output and thermal dissipation, as compared with that of conventional LEDs on sapphire. The intrinsic physical mechanism of the auto-split LLO technique is studied by a Frank-Read dislocation clustering model. The laser energy density and mesa spacing are shown to be key factors in the auto-split LLO method. It is believed that this method offers an alternative way to fabricate high-performance GaN-based thin-film LEDs.

Keywords

III-V semiconductors; gallium compounds; laser beam applications; light emitting diodes; semiconductor thin films; wide band gap semiconductors; ASV-LED; Frank-Read dislocation clustering model; GaN; autosplit laser lift-off technique; autosplit vertical injection green light emitting diodes; laser energy density; mesa spacing; sapphire; thermal dissipation; thin film LED; Fabrication; Films; Gallium nitride; Light emitting diodes; Substrates; Surface emitting lasers; Auto-split laser lift off; GaN; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2013.2274768

Filename

6568967