Modern power switch: Silicon carbide technology

Over the last fifty years, silicon has been the predominant semiconductor in the world of power electronics. Recently a faster, tougher, and more efficient replacement of pure silicon has been introduced; it is the Silicon Carbide (SiC). Several SiC devices are being developed. These devices include Junction Barrier Schottky (JBS) and Schottky Barrier Diodes (SBD), Junction Field Effect Transistor (JFET) and Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET), Bipolar Junction Transistor (BJT). Each one of these devices has different characteristics, structure and properties which make them suitable for many power switching applications. Therefore, a new range of SiC-based power electronics was created.