Title :
Bifurcation diagrams in MOS-NDR frequency divider circuits
Author :
Nunez, Juan ; Avedillo, Maria J. ; Quintana, Jose M.
Author_Institution :
Inst. de Microelectron., Univ. de Sevilla (US), Sevilla, Spain
Abstract :
The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an I-V characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which uses Resonant Tunneling Diodes (RTDs). The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.
Keywords :
MOSFET; bifurcation; frequency dividers; inductors; resistors; resonant tunnelling diodes; I-V characteristic; MOS transistors; MOS-NDR frequency divider circuits; bifurcation diagrams; inductor; negative differential resistance; period adding sequences; resistor; resonant tunneling diodes; Bifurcation; Chaos; Frequency conversion; MOSFETs; Resonant frequency; Trajectory;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
DOI :
10.1109/ICECS.2012.6463558
