High temperature ultra-fast gallium arsenide rectifier devices

The report is related to the high temperature electronics field. The industrial developed country practice demonstrates that up to 70 % of the fabricated electrical energy passes through semiconductor converters. Only in the field of electrical drive, which uses about 50% from the produced electrical energy, passing to the frequency converter of the asynchronous drives speed control, brings an energy economy up to 25 %. In the electrical transport with the energy braking recovering the economy is more than 30%. The present elaboration is foreseeing the improvement of the technological production route of gallium arsenide (GaAs) power semiconductor devices (PSD), by introducing some innovative technological processes as: (1) GaAs epitaxial technology in the Ga-AsCI₃-H₂ system; (2) epitaxial structures divided into crystals by chemical method; (3) GaAs p-n junction passivation by own oxide (Ga₂O₃) precipitate on the divided surface of the crystal. The goal of the project is increasing manufacturing efficiency (ME) at the GaAs power devices with more than 600 V of voltage fabrication. The proposed improvements are increasing ME with 40% and are expanding the blocking voltage interval up to 1000 V. As a result a new product was elaborated and proposed to the manufacturing- the ultra-fast current converter with 80 ns of recovery time, stable at high temperature (200 °C) and 4.5 kV of blocking voltage, that outrun the characteristics of commercial product ESJC30-05 (0.3 μs, 110 °C).