Title :
Efficient gate drive circuit for IGBT
Author :
Rata, Mihai ; Rata, Gabriela ; Mandici, L. ; Cemomazu, D. ; Prodan, Cristina ; Afanasov, C. ; Nitan, Ilie
Author_Institution :
Fac. of Electr. Eng. & Comput. Sci., Stefan cel Mare Univ. of Suceava, Suceava, Romania
Abstract :
The IGBT is one of most important power semiconductor device for converter applications from several hundred watts up to 2 MW. This is used only in commutation mode and combines advantages of a MOSFET´s (high gate resistance) and bipolar transistor´s (small collector-emitter drop at saturated condition). When we use IGBTs for converter application it´s very important to choose an optimum solution for circuit driver. Now many circuits driver have some protections for IGBT incorporated. This paper presents a study on the performance of one circuit driver (Skyper32 PRO driver, from Semikron), some experimental results and conclusions about this.
Keywords :
MOSFET; commutation; driver circuits; insulated gate bipolar transistors; power semiconductor devices; IGBT; MOSFET; Semikron; Skyper32 PRO driver; bipolar transistor; circuit driver; commutation mode; converter applications; gate drive circuit; high gate resistance; power semiconductor device; saturated condition; small collector-emitter drop; Capacitors; Driver circuits; Insulated gate bipolar transistors; Logic gates; Snubbers; Switches; Electrical engineering education; Power semiconductor devices;
Conference_Titel :
Electrical and Power Engineering (EPE), 2012 International Conference and Exposition on
Conference_Location :
Iasi
Print_ISBN :
978-1-4673-1173-1
DOI :
10.1109/ICEPE.2012.6463590
