• DocumentCode
    59688
  • Title

    Energy-Efficient Non-Boolean Computing With Spin Neurons and Resistive Memory

  • Author

    Sharad, Mrigank ; Deliang Fan ; Aitken, K. ; Roy, Kaushik

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    13
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    23
  • Lastpage
    34
  • Abstract
    Emerging nonvolatile resistive memory technologies can be potentially suitable for computationally expensive analog pattern-matching tasks. However, the use of CMOS analog circuits with resistive crossbar memory (RCM) would result in large power consumption and poor scalability, thereby eschewing the benefits of RCM-based computation. We explore the potential of emerging spin-torque devices for RCM-based approximate computing circuits. Emerging spin-torque switching techniques may lead to nanoscale, current-mode spintronic switches that can be used for energy-efficient analog-mode data processing. We propose the use of such low-voltage, fast-switching, magnetometallic “spin neurons” for ultralow power non-Boolean computing with RCM. We present the design of analog associative memory for face recognition using RCM, where, substituting conventional analog circuits with spin neurons can achieve ~100× lower power consumption.
  • Keywords
    CMOS analogue integrated circuits; content-addressable storage; current-mode circuits; face recognition; integrated circuit design; magnetoelectronics; switches; CMOS analog circuits; RCM-based approximate computing circuits; analog associative memory design; analog pattern-matching tasks; current-mode spintronic switch; energy-efficient analog-mode data processing; energy-efficient nonBoolean computing; face recognition; magnetometallic spin neurons; nanoscale switch; nonvolatile resistive memory technologies; resistive crossbar memory; spin-torque devices; spin-torque switching techniques; CMOS integrated circuits; Magnetic tunneling; Memristors; Neurons; Power demand; Resistance; Switches; Hardware; low power; magnets; memory; pattern matching;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2013.2286424
  • Filename
    6637128