DocumentCode
596919
Title
A study on MOSFET rectifiers with transistors operating in the weak inversion region
Author
Goncalves, Hugo ; Martins, Miguel ; Fernandes, J.
Author_Institution
Inst. Super. Tecnico, INESC-ID, Tech. Univ. Lisbon, Lisbon, Portugal
fYear
2012
fDate
9-12 Dec. 2012
Firstpage
665
Lastpage
668
Abstract
Today´s energy harvesting circuits have to harvest energy from very weak sources demanding high sensitivity and high efficiency. In this paper it is presented a study on rectifiers used in radio frequency (RF) energy harvesting systems with transistors operating in weak-inversion region, where the losses due to reverse current become comparable to the direct (or charge) current. The study compares three rectifier topologies and makes use of all transistors terminals to improve performance, increasing the direct current and reducing the reverse current. The results show that connecting an anti-phase signal to the transistor´s gate and bulk terminals improves the rectifier´s delivered power.
Keywords
MOSFET; energy harvesting; rectifiers; MOSFET rectifier; antiphase signal; energy harvesting circuit; radio frequency energy harvesting system; rectifier topology; transistor; weak inversion region; Capacitors; Energy harvesting; Logic gates; Mathematical model; Radio frequency; Topology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location
Seville
Print_ISBN
978-1-4673-1261-5
Electronic_ISBN
978-1-4673-1259-2
Type
conf
DOI
10.1109/ICECS.2012.6463638
Filename
6463638
Link To Document