• DocumentCode
    596919
  • Title

    A study on MOSFET rectifiers with transistors operating in the weak inversion region

  • Author

    Goncalves, Hugo ; Martins, Miguel ; Fernandes, J.

  • Author_Institution
    Inst. Super. Tecnico, INESC-ID, Tech. Univ. Lisbon, Lisbon, Portugal
  • fYear
    2012
  • fDate
    9-12 Dec. 2012
  • Firstpage
    665
  • Lastpage
    668
  • Abstract
    Today´s energy harvesting circuits have to harvest energy from very weak sources demanding high sensitivity and high efficiency. In this paper it is presented a study on rectifiers used in radio frequency (RF) energy harvesting systems with transistors operating in weak-inversion region, where the losses due to reverse current become comparable to the direct (or charge) current. The study compares three rectifier topologies and makes use of all transistors terminals to improve performance, increasing the direct current and reducing the reverse current. The results show that connecting an anti-phase signal to the transistor´s gate and bulk terminals improves the rectifier´s delivered power.
  • Keywords
    MOSFET; energy harvesting; rectifiers; MOSFET rectifier; antiphase signal; energy harvesting circuit; radio frequency energy harvesting system; rectifier topology; transistor; weak inversion region; Capacitors; Energy harvesting; Logic gates; Mathematical model; Radio frequency; Topology; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
  • Conference_Location
    Seville
  • Print_ISBN
    978-1-4673-1261-5
  • Electronic_ISBN
    978-1-4673-1259-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2012.6463638
  • Filename
    6463638