A multi-valued 350nm CMOS voltage reference

Author

Lourenco, Nuno ; Alves, Luis Nero ; Cura, Jose Luis

Author_Institution

Dept. de Electron., Telecomun. e Inf., Univ. de Aveiro, Aveiro, Portugal

fYear

2012

fDate

9-12 Dec. 2012

Firstpage

629

Lastpage

632

Abstract

This paper describes, a voltage reference source using sub-threshold MOSFETs. The circuit supports supply voltages ranging from 1.5V to 3.3V and temperature variations ranging from -20°C to 80°C. Different values for the voltage reference can be achieved without severe performance impairments. The proposed circuit was produced in the 350nm CMOS process from AMS and occupies less than 0.0335mm². Simulation and experimental data show that this circuit is able to achieve, a 3mV variation for the entire temperature span and a 2mV variation for the entire supply voltage span.

Keywords

CMOS integrated circuits; MOSFET; reference circuits; AMS; CMOS process; multivalued CMOS voltage reference; size 350 nm; sub-threshold MOSFET; temperature -20 degC to 80 degC; temperature span; voltage 1.5 V to 3.3 V; voltage reference source; Equations; Integrated circuit modeling; Mathematical model; Temperature dependence; Temperature measurement; Temperature sensors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on

Conference_Location

Seville

Print_ISBN

978-1-4673-1261-5

Electronic_ISBN

978-1-4673-1259-2

Type

conf

DOI

10.1109/ICECS.2012.6463668

Filename

6463668