DocumentCode :
596946
Title :
A multi-valued 350nm CMOS voltage reference
Author :
Lourenco, Nuno ; Alves, Luis Nero ; Cura, Jose Luis
Author_Institution :
Dept. de Electron., Telecomun. e Inf., Univ. de Aveiro, Aveiro, Portugal
fYear :
2012
fDate :
9-12 Dec. 2012
Firstpage :
629
Lastpage :
632
Abstract :
This paper describes, a voltage reference source using sub-threshold MOSFETs. The circuit supports supply voltages ranging from 1.5V to 3.3V and temperature variations ranging from -20°C to 80°C. Different values for the voltage reference can be achieved without severe performance impairments. The proposed circuit was produced in the 350nm CMOS process from AMS and occupies less than 0.0335mm2. Simulation and experimental data show that this circuit is able to achieve, a 3mV variation for the entire temperature span and a 2mV variation for the entire supply voltage span.
Keywords :
CMOS integrated circuits; MOSFET; reference circuits; AMS; CMOS process; multivalued CMOS voltage reference; size 350 nm; sub-threshold MOSFET; temperature -20 degC to 80 degC; temperature span; voltage 1.5 V to 3.3 V; voltage reference source; Equations; Integrated circuit modeling; Mathematical model; Temperature dependence; Temperature measurement; Temperature sensors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
Type :
conf
DOI :
10.1109/ICECS.2012.6463668
Filename :
6463668
Link To Document :
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