SkyFlash EC project: Architecture for a 1Mbit S-Flash for space applications

Author

Arbat, A. ; Calligaro, C. ; Dayan, Vladislav ; Pikhay, Evgeny ; Roizin, Y.

Author_Institution

RedCat Devices, Milan, Italy

fYear

2012

fDate

9-12 Dec. 2012

Firstpage

617

Lastpage

620

Abstract

This work presents an innovative architecture to fabricate a non volatile memory for space applications using a S-Flash memory cell. The design takes into account the different effects of the radiation that could damage the circuits and the memory cell in harsh environments. The memory cell has been developed by TowerJazz Semiconductors to be compatible with the standard 180nm CMOS process. A 1Mbit prototype has been designed using the presented architecture.

Keywords

CMOS memory circuits; avionics; flash memories; random-access storage; CMOS process; S-flash memory cell; SkyFlash EC project; TowerJazz Semiconductors; harsh environments; innovative architecture; nonvolatile memory; space applications; CMOS integrated circuits; Computer architecture; MOSFETs; Microprocessors; Nonvolatile memory; Programming; Radiation hardening;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on

Conference_Location

Seville

Print_ISBN

978-1-4673-1261-5

Electronic_ISBN

978-1-4673-1259-2

Type

conf

DOI

10.1109/ICECS.2012.6463671

Filename

6463671

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=596949