Title :
A passive CMOS rectifier with leakage current control for medical implants
Author :
Ghanad, Mehrdad A. ; Dehollain, Catherine
Author_Institution :
Radio Freq. Integrated Circuit Group (RFIC), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
A passive rectifier for reducing reverse leakage currents and ripples of rectified output voltage is proposed. The Power Conversion Efficiency (PCE) of the rectifier is also improved by controlling the turn on time of the NMOS transistors. The rectifier is implemented with standard 0.18 um CMOS technology. The measured rectifier achieves 66 % PCE while delivering 3 mW to 1.8 Volt load at 13.56 MHz.
Keywords :
CMOS integrated circuits; MOSFET; electric current control; leakage currents; prosthetics; rectifiers; NMOS transistors; frequency 13.56 MHz; leakage current control; medical implants; passive CMOS rectifier; power 3 mW; power conversion efficiency; rectified output voltage; reverse leakage currents; ripples; size 0.18 mum; standard CMOS technology; voltage 1.8 V; Current measurement; Implants; Leakage current; Rectifiers; Transistors; Voltage control; Voltage measurement;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
DOI :
10.1109/ICECS.2012.6463694
