A 749nW 1MSps 8-bit SAR ADC at 0.5V employing boosted switches

Author

Rabuske, Taimur ; Fernandes, J. ; Nooshabadi, Saeid ; Rodrigues, C.R.L. ; Rabuske, Fabio

Author_Institution

Inst. Super. Tecnico, INESC-ID, Tech. Univ. Lisbon, Lisbon, Portugal

fYear

2012

fDate

9-12 Dec. 2012

Firstpage

500

Lastpage

503

Abstract

Portability is an increasingly demanded feature in modern electronic system and circuit design, pushing ever tighter on power budget. Besides the well-known limitations on the power constraints, alternative power sources such as solar, vibrational and RF suggest the employment of also lower operating voltages, to match the sub-Volt levels generated by these sources. In this paper, we propose an 8-bit 1MSps SAR ADC in 90nm working with a 0.5V power supply, whose operation relies on an improved boosted switch. The ADC simulation results, including transient noise, exhibit a 7.67 effective number of bits (ENOB) for a full-scale input sinusoid near Nyquist frequency, while consuming 749nW. This leads to a figure-of-merit of 3.68fJ/conv.step.

Keywords

analogue-digital conversion; circuit noise; circuit simulation; switches; ADC simulation; ENOB; SAR ADC; alternative power sources; bit rate 1 Mbit/s; boosted switch; circuit design; effective number of bits; full-scale input sinusoid near Nyquist frequency; modern electronic system; portability; power 749 nW; power budget; power constraint; size 90 nm; subvolt level; successive approximation register; transient noise; voltage 0.5 V; word length 8 bit; CMOS integrated circuits; Capacitance; Capacitors; Logic gates; Noise; Transistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on

Conference_Location

Seville

Print_ISBN

978-1-4673-1261-5

Electronic_ISBN

978-1-4673-1259-2

Type

conf

DOI

10.1109/ICECS.2012.6463699

Filename

6463699