DocumentCode :
597010
Title :
CMOS SPADs selection, modeling and characterization towards image sensors implementation
Author :
Garcia, Mario Macos ; Vinuesa, O.G. ; del Rio Fernandez, R. ; Verdu, B.P. ; Vazquez, Angel Rodriguez
Author_Institution :
Inst. of Microelectron. of Sevilla, Univ. de Sevilla, Seville, Spain
fYear :
2012
fDate :
9-12 Dec. 2012
Firstpage :
332
Lastpage :
335
Abstract :
The selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several quenching circuits in order to compare their relative performances. Various configurations for the active region and the prevention of the premature edge breakdown are tested, looking for a miniaturization of the devices to implement image sensor arrays without loses in their performance.
Keywords :
CMOS integrated circuits; avalanche photodiodes; image sensors; semiconductor device models; UMC CMOS; image sensor arrays; image sensors; quenching circuits; single photon avalanche diodes; size 180 nm; CMOS integrated circuits; CMOS technology; Integrated circuit modeling; Noise; Photonics; Standards; Structural rings;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
Type :
conf
DOI :
10.1109/ICECS.2012.6463734
Filename :
6463734
Link To Document :
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