Title :
Design of a 80 Gbit/s SiGe BiCMOS fully differential input buffer for serial electrical communication
Author :
De Keulenaer, T. ; Yu Ban ; Zhisheng Li ; Bauwelinck, J.
Author_Institution :
Ghent Univ., Ghent, Belgium
Abstract :
This paper presents a high bandwidth trans-impedance amplifier (TIA) used as a high speed input buffer for next generation serial electrical communication. The input buffer presented in this work is a linear broadband low noise amplifier. It is demonstrated that it can be used for receiving baseband modulated electrical communication in different modulation formats (NRZ, PAM4, duobinary, ...) for bit rates up to 80 Gbit/s. With good impedance matching up to 50 GHz, an area of 0.18mm2 and a power consumption of 80mW from a 2.5V power supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; impedance matching; operational amplifiers; wideband amplifiers; SiGe; SiGe BiCMOS; TIA; baseband modulated electrical communication; bit rate 80 Gbit/s; fully differential input buffer; high speed input buffer; impedance matching; linear broadband amplifier; low noise amplifier; next generation serial electrical communication; power 80 mW; transimpedance amplifier; voltage 2.5 V; Bandwidth; Impedance; Inductors; Integrated circuit modeling; Layout; Noise; Silicon germanium;
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2012 19th IEEE International Conference on
Conference_Location :
Seville
Print_ISBN :
978-1-4673-1261-5
Electronic_ISBN :
978-1-4673-1259-2
DOI :
10.1109/ICECS.2012.6463757
