• DocumentCode
    597283
  • Title

    Electronic excitation mediated structuring of semiconducting oxides

  • Author

    Museur, L. ; Anglos, D. ; Kanaev, A.

  • Author_Institution
    IESL - FORTH, Heraklion, Greece
  • fYear
    2012
  • fDate
    3-7 Sept. 2012
  • Firstpage
    129
  • Lastpage
    130
  • Abstract
    Strong modifications of semiconducting oxides can be provoked by high-density electronic excitation above the Mott density. This regime corresponds to the manifestation of electron-hole plasma continuum. The nanostructuring of monocrystalline zinc oxide in this regime is correlated with elongation of the inter-crystalline planes and intensification of exciton photoluminescence.
  • Keywords
    Excitons; Laser ablation; Laser beams; Laser excitation; Radiation effects; Semiconductor lasers; Zinc oxide; ZnO; femtosecond laser processing; high-density electronic excitation; surface nanostructuring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
  • Conference_Location
    Lviv, Ukraine
  • Print_ISBN
    978-1-4673-4491-3
  • Type

    conf

  • DOI
    10.1109/OMEE.2012.6464819
  • Filename
    6464819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=597283