DocumentCode
597290
Title
Some properties of thin film structures on the base of ZnO obtained by MOCVD method
Author
Roshchina, N.M. ; Smertenko, P.S. ; Stepanov, V.G. ; Zavyalova, L.V. ; Lytvyn, O.S.
Author_Institution
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine
fYear
2012
fDate
3-7 Sept. 2012
Firstpage
59
Lastpage
60
Abstract
This paper reports on the ZnO film structures obtained by MOCVD method on Si substrates. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.
Keywords
Films; Heterojunctions; MOCVD; Morphology; Silicon; Substrates; Zinc oxide; ZnO/Si heterojunction; current-voltage characteristics; metaloorganic chemical vapour deposition;
fLanguage
English
Publisher
ieee
Conference_Titel
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location
Lviv, Ukraine
Print_ISBN
978-1-4673-4491-3
Type
conf
DOI
10.1109/OMEE.2012.6464843
Filename
6464843
Link To Document