Title :
Electrochemical aluminium oxide technology for production of electronics
Author :
Sokol, V. ; Shulgov, V.
Author_Institution :
Belarusian State University of Informatics and Radioelectronics (BSUIR), Minsk, Belarus
Abstract :
The paper reviews the results of application of porous alumina formed using the electrochemical anodization process. Porous alumina is widely used in the microelectronics as a) anodized aluminum bases, b)systems of multilevel interconnections, c) aluminum packages for VLSIs and hybrid integrated circuits, d) thin-film temperature sensors, e) Al-based heating elements etc. Parameters of the structures with porous anodic alumina are summarized depending on the anodizing conditions.
Keywords :
Aluminum; Dielectrics; Heating; Integrated circuit interconnections; Resistance; Substrates; Temperature sensors; aluminum; electrochemical anodizing; multicrystalline modules; multilevel interconnection; porous anodic alumina;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464845
