Title :
Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures
Author :
Krajewski, Tomasz A. ; Smertenko, P.S. ; Luka, Grzegorz ; Wachnicki, L. ; Cherevko, A. ; Olkhovik, G. ; Zakrzewski, Adam J. ; Godlewski, Marek ; Guziewicz, Elzbieta
Author_Institution :
Institute of Physics, Polish Acad. of Sciences, Warsaw, Poland
Abstract :
This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.
Keywords :
Atomic layer deposition; Hafnium compounds; Junctions; Schottky barriers; Schottky diodes; Zinc oxide; ZnO-based Schottky diode; atomic layer deposition (ALD); current-voltage characteristics; differential approach;
Conference_Titel :
Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
Conference_Location :
Lviv, Ukraine
Print_ISBN :
978-1-4673-4491-3
DOI :
10.1109/OMEE.2012.6464855
