• DocumentCode
    597300
  • Title

    Crystal growth of the (Ga1−xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals

  • Author

    Ivashchenko, I.A. ; Halyan, V.V. ; Danylyuk, I.V. ; Pankevuch, V.Z. ; Davydyuk, G.Ye. ; Olekseyuk, I.D.

  • Author_Institution
    Department of Inorganic and Physical Chemistry, Lesya Ukrainka Volyn National University, Lutsk, Ukraine
  • fYear
    2012
  • fDate
    3-7 Sept. 2012
  • Firstpage
    33
  • Lastpage
    34
  • Abstract
    The phase diagram of the Ga2Se3-In2Se3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 MΩ) was measured.
  • Keywords
    Absorption; Annealing; Crystals; Erbium; Photonic band gap; Resistance; X-ray scattering; absorption spectra; band gap; phase diagram; resistance; semiconductor; single crystal;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Oxide Materials for Electronic Engineering (OMEE), 2012 IEEE International Conference on
  • Conference_Location
    Lviv, Ukraine
  • Print_ISBN
    978-1-4673-4491-3
  • Type

    conf

  • DOI
    10.1109/OMEE.2012.6464856
  • Filename
    6464856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=597300