Title :
ZnO nanowires lift-off from silicon substrate embedded in flexible films
Author :
Ray-Hua Horng ; Hung-I Lin ; Dong-Sing Wuu
Author_Institution :
Inst. Grad. of Precision Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
A novel lifting-off method of ZnO nanowires from Si substrate and embedded in flexible films have been proposed in this study. Compared with peeling-off method by polydimethyl- siloxane (PDMS), the embedded ZnO nanowires may suffer from external forces to change the dimension. The shape of ZnO nanowires remained almost unchanged after using the novel lifting-off process. Flexible films served as the secondary and flexible substrate after ZnO nanowires transferring from the Si substrate. The lift-off fabrication is a candidate for Si substrate recycling usage and for large area fabrication.
Keywords :
II-VI semiconductors; flexible electronics; nanofabrication; nanowires; polymer blends; recycling; wide band gap semiconductors; zinc compounds; Si; Si substrate recycling usage; ZnO; ZnO nanowire shape; ZnO nanowires; flexible films; flexible substrate; large area fabrication; lift-off fabrication; lifting-off method; peeling-off method; polydimethylsiloxane; secondary substrate; silicon substrate; Epoxy resins; Films; Gold; Nanowires; Silicon; Substrates; Zinc oxide; PDMS; ZnO; lift-off and flexible film; nanowires;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465936
