DocumentCode :
597555
Title :
Threshold voltage of nanoscale si gate-all-around MOSFET: Short-channel, quantum, and Volume Effects
Author :
Min-Chul Sun ; Hyun Woo Kim ; Sang Wan Kim ; Jung Han Lee ; Hyungjin Kim ; Byung-Gook Park
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul, South Korea
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
27
Lastpage :
29
Abstract :
The threshold voltage (VT) control of gate-all-around (GAA) MOSFETs as an extreme case of multi-gate MOSFETs is studied. After breaking down the components constituting VT into several terms, their relative sizes are compared using TCAD technique and analytical calculation of quantum mechanical problem. As a result, the channel diameter is found to be an important knob to control VT of a GAA MOSFET, which influences on short-channel effect, quantum confinement effect and other effects.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; technology CAD (electronics); GAA MOSFET; Si; TCAD technique; channel diameter; gate-all-around MOSFET; multigate MOSFET; nanoscale Si; quantum confinement effect; quantum mechanical problem; short-channel effect; threshold voltage; volume effect; Doping; Logic gates; MOSFET circuits; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; field-effect transistor; gate-all-around; quantum effect; short-channel effect; threshold voltage; volume effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6465943
Filename :
6465943
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=597555
بازگشت