Modeling and analysis of 1.3 μm InAs/GaAs self-assembled quantum dot lasers with rate equation

Author

Liu, Charles Y. ; Wang, Huifang ; Meng, Q.Q.

Author_Institution

TemasekLaboratories@NTU (TL@NTU), Nanyang Technol. Univ., Singapore, Singapore

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

74

Lastpage

77

Abstract

Temperature (20-100 °C) and excitation power (10-700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 μm GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared with the experimentally obtained modal gain value from the QD laser.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; InAs-GaAs; PL behavior; QD; excitonic modal gain; photoluminescence measurement; power 10 mW to 700 mW; rate equation; self-assembled quantum dot laser structure; size 1.3 mum; temperature 20 degC to 100 degC; Equations; Excitons; Laser excitation; Mathematical model; Measurement by laser beam; Quantum dot lasers; Temperature measurement; carrier dynamics; modal gain; quantum dot laser; rate equation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465958

Filename

6465958