Title :
Modeling and analysis of 1.3 μm InAs/GaAs self-assembled quantum dot lasers with rate equation
Author :
Liu, Charles Y. ; Wang, Huifang ; Meng, Q.Q.
Author_Institution :
TemasekLaboratories@NTU (TL@NTU), Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Temperature (20-100 °C) and excitation power (10-700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 μm GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared with the experimentally obtained modal gain value from the QD laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; InAs-GaAs; PL behavior; QD; excitonic modal gain; photoluminescence measurement; power 10 mW to 700 mW; rate equation; self-assembled quantum dot laser structure; size 1.3 mum; temperature 20 degC to 100 degC; Equations; Excitons; Laser excitation; Mathematical model; Measurement by laser beam; Quantum dot lasers; Temperature measurement; carrier dynamics; modal gain; quantum dot laser; rate equation;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465958
