Title :
Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs
Author :
Hsu, H.W. ; Huang, H.S. ; Chen, Song Yan ; Wang, Michael C. ; Li, K.C. ; Lin, Kate Ching-Ju ; Liu, Chi Harold
Author_Institution :
Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol. (NTUT), Taipei, Taiwan
Abstract :
In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.
Keywords :
Ge-Si alloys; MOSFET; hot carriers; semiconductor device reliability; CESL nitride layers; CESL stressor; channel region; contact-etch-stop-layer stressor; hot carrier reliability; silicon germanium channel; size 90 nm; strained nMOSFET; stress distribution; stress impact; Educational institutions; Hot carriers; MOSFETs; Reliability; Silicon germanium; Strain; Stress; Contact-etch-stop-layer (CESL); SiGe channel; hot carrier reliability;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465962
