Title :
Self-consistent quasi static CV characterization of InxGa1−xSb buried channel n-MOSFET
Author :
Islam, Md Shariful ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
The quasi-static capacitance-voltage (CV) characteristics of buried channel n-InGaSb MOSFET is investigated using SILVACO´s ATLAS device simulation package. Self-consistent method is applied to solve the coupled one dimensional Schrödinger-Poisson equation taking into account of wave function penetration and strain effect. It is found that the CV profiles and threshold voltage are strongly depended on some important process parameters like oxide thickness, channel thickness, channel composition and temperature for buried channel InGaSb n-MOSFET.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; gallium compounds; indium compounds; InxGa1-xSb; SILVACO ATLAS device simulation package; buried channel n-MOSFET; channel thickness; one dimensional Schrodinger-Poisson equation; oxide thickness; self-consistent quasi static CV characterization; strain effect; threshold voltage; wave function penetration; Capacitance; Logic gates; MOSFET circuits; Materials; Performance evaluation; Strain; Threshold voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465964
