Title :
Critical thickness of diamond-like carbon study using X-ray photoelectron spectroscopy depth profiling
Author :
Khamnaulthong, N. ; Siangchaew, K. ; Limsuwan, P.
Author_Institution :
Dept. of Phys., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok, Thailand
Abstract :
A bi-layer stack of ion-beam sputtered Si-Si3N4 and tetrahedral amorphous diamond-like carbon made by filtered cathodic arc thin films were grown and heated to 200 °C at varying time to study the protective capability of diamond-like carbon film in preventing oxidation of underlying material. Depth profiling of such film by X-ray photoelectron spectroscopy showed that tetrahedral amorphous diamond-like carbon can slow down oxidation and with 1.0 nm thickness film can prevent Si-Si3N4 film from oxidizing when heated up to 200 °C.
Keywords :
X-ray photoelectron spectra; amorphous state; diamond-like carbon; elemental semiconductors; ion beam effects; oxidation; semiconductor thin films; silicon; silicon compounds; sputter deposition; C; Si-Si3N4; X-ray photoelectron spectroscopy; bi-layer stack; critical thickness; depth profiling; filtered cathodic arc thin films; ion-beam sputtering; oxidation; size 1.0 nm; temperature 200 degC; tetrahedral amorphous diamond-like carbon; Adhesives; Atomic layer deposition; Diamond-like carbon; Films; Heating; Oxidation; Spectroscopy;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465973
